The base region is made very thin and lightly doped, as it’s the main function is to control the flow of electron through the transistor. It’s lightly doped hence less number of majority carriers will be there resulting in a lesser percentage of emitter current flow through the base than the collector. That’s why base current is negligibly small.

Also, emitter junction is always forward biased and collector junction is reverse biased. This setup results in the transistor being in the active region. Otherwise, no current flows through the transistor. (Cut-off or saturation region)

Hence, both B) and C) are correct.