Solution of Chapter 14. Semiconductor Electronics: Materials, Devices and Simple Circuits (Physics Part-Ii Book)

In an n-type silicon, which of the following statement is true:

Which of the statements given in Exercise 14.1 is true for p-type semiconductors.

Carbon, silicon and germanium have four valence electrons each. These are characterised by valence and conduction bands separated by energy band gap respectively equal to (E_g)_C, (E_g)_Si and (E_g)_Ge. Which of the following statements is true?

In an unbiased p-n junction, holes diffuse from the p-region to n-region because

When a forward bias is applied to a p-n junction, it

For transistor action, which of the following statements are correct:

For a transistor amplifier, the voltage gain

In half-wave rectification, what is the output frequency if the Input frequency is 50 Hz. What is the output frequency of a full-wave rectifier for the same input frequency.

For a CE-transistor amplifier, the audio signal voltage across the collected resistance of 2k is 2 V. Suppose the current the amplification factor of the transistor is 100, find the input signal voltage and base current, if the base resistance is 1k.

Two amplifiers are connected one after the other in series (cascaded). The first amplifier has a voltage gain of 10 and the second has a voltage gain of 20. If the input signal is 0.01 volt, calculate the output ac signal.

A p-n photodiode is fabricated from a semiconductor with the band gap of 2.8 eV. Can it detect a wavelength of 6000 nm?

The number of silicon atoms per m³ is 5 × 10²⁸. This is doped simultaneously with 5 × 10²² atoms per m³ of Arsenic and 5 × 10²⁰ per m³ atoms of Indium. Calculate the number of electrons and holes. Given that ni = 1.5 × 10¹⁶ m^–3. Is the material n-type or p-type?

In an intrinsic semiconductor, the energy gap Eg is 1.2eV. Its hole mobility is much smaller than electron mobility and independent of temperature. What is the ratio between conductivity at 600K and that at 300K? Assume that the temperature dependence of intrinsic carrier concentration ni is given by

In a p-n junction diode, the current I can be expressed as

Where I₀ is called the reverse saturation current, V is the voltage across the diode and is positive for forward bias and negative for reverse bias, and I is the current through the diode, kB is the Boltzmann constant (8.6 × 10^–5 eV/K) and T is the absolute temperature. If for a given diode I₀ = 5 × 10^–12 A and T = 300 K, then

(a) What will be the forward current at a forward voltage of 0.6 V?

(b) What will be the increase in the current if the voltage across the diode is increased to 0.7 V?

(c) What is the dynamic resistance?

(d) What will be the current if reverse bias voltage changes from 1 V to 2 V?

You are given the two circuits as shown in Fig. 14.44. Show that circuit (a) acts as OR gate while the circuit (b) acts as AND gate.

Write the truth table for a NAND gate connected as given in Fig. 14.45.

Hence identify the exact logic operation carried out by this circuit.

You are given two circuits as shown in Fig. 14.46, which consist of NAND gates. Identify the logic operation carried out by the two circuits.

Write the truth table for circuit given in Fig. 14.47 below consisting of NOR gates and identify the logic operation (OR, AND, NOT) which this circuit is performing.

(Hint: A = 0, B = 1 then A and B inputs of second NOR gate will be 0 and hence Y = 1. Similarly, work out the values of Y for other combinations of A and B. Compare with the truth table of OR, AND, NOT gates and find the correct one.)

Write the truth table for the circuits given in Fig. 14.48 consisting of NOR gates only. Identify the logic operations (OR, AND, NOT) performed by the two circuits.